SmFeAsO 1Γx F x a b s t r a c t A low temperature (1100 Β°C) process of preparing F-doped SmFeAsO samples has been developed using SmF 3 with nanometer scale as the source of fluorine. A series of the SmFeAsO 1Γx F x (x = 0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3) samples have been prepared using the presen
β¦ LIBER β¦
Compare of the electronic structures of F- and Ir-doped SmFeAsO
β Scribed by Y. Zhang; C.H. Cheng; Y.L. Chen; Y.J. Cui; W.G. You; H. Zhang; Y. Zhao
- Book ID
- 104084600
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 408 KB
- Volume
- 470
- Category
- Article
- ISSN
- 0921-4534
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Low temperature preparation and supercon
β
Y.L. Chen; Y.J. Cui; C.H. Cheng; Y. Yang; L. Wang; Y.C. Li; Y. Zhang; Y. Zhao
π
Article
π
2010
π
Elsevier Science
π
English
β 806 KB
Electronic structure of doped f semicond
β
C. Demangeat; M.A. Khan; J.C. Parlebas
π
Article
π
1980
π
Elsevier Science
β 188 KB
Electronic structures of silicon doped Z
β
R. Chowdhury; P. Rees; S. Adhikari; F. Scarpa; S.P. Wilks
π
Article
π
2010
π
Elsevier Science
π
English
β 385 KB
We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn 1 Γ x Si x O Γ°0 r xr 12:5Γ
Molecular and electronic structures of d
β
Tanaka, J.; Mashita, N.; Mizoguchi, K.; Kume, K.
π
Article
π
1989
π
Elsevier Science
π
English
β 283 KB
5f electronic structure of UPt4Ir by XPS
β
Hillebrecht, F.U.; Sarma, D.D.; MΓ₯rtensson, N.; ZoΕnierek, Z.; Campagna, M.
π
Article
π
1985
π
Elsevier Science
π
English
β 277 KB
First-principles study of the electronic
β
Zuo, Chunying; Wen, Jing; Zhong, Cheng
π
Article
π
2012
π
IOP Publishing
π
English
β 351 KB