We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to %5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well,
Comparative study of photoluminescence in ordered and disordered GaInP alloys under high pressure
β Scribed by Hideki Kojima; Hiroshi Kayama; Toshihiko Kobayashi; Kazuo Uchida; jun'Ichiro Nakahara
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 436 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0022-3697
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