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Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction

✍ Scribed by Tsai, Jung-Hui; Lee, Ching-Sung; Jhou, Jia-Cing; Wu, You-Ren; Chiang, Chung-Cheng; Chao, Yi-Ting; Liu, Wen-Chau

No coin nor oath required. For personal study only.

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