Compact MOSFET Models for VLSI Design

✍ Scribed by A. B. Bhattacharyya

• Publisher: Wiley-IEEE Press
• Year: 2009
• Tongue: English
• Leaves: 448
• Edition: 1
• Category: Library

✦ Synopsis

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models.Adopts a unified approach to guide students through the confusing array of MOSFET modelsLinks MOS physics to device models to prepare practitioners for real-world design activitiesHelps fabless designers bridge the gap with off-site foundriesFeatures rich coverage of: quantum mechanical related phenomenaSi-Ge strained-Silicon substratenon-classical structures such as Double Gate MOSFETsPresents topics that will prepare readers for long-term developments in the fieldIncludes solutions in every chapterCan be tailored for use among students and professionals of many levelsComes with MATLAB code downloads for independent practice and advanced studyThis book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference.Access the MATLAB code, solution manual, and lecture materials at the companion website:  www.wiley.com/go/bhattacharyya

✦ Table of Contents

Front Cover......Page 1
Front Matter......Page 2
Title Page......Page 3
Copyright......Page 4
Dedication......Page 5
Contents......Page 6
Preface......Page 12
Acknowledgements......Page 16
List of Symbols......Page 19
1.1 Introduction......Page 23
1.2 Crystal Planes......Page 26
1.3 Band Theory of Semiconductors......Page 27
1.4 Carrier Statistics......Page 36
1.5 Carrier Generation and Recombination......Page 43
1.6 Carrier Scattering......Page 45
1.7 Contacts and Interfaces......Page 51
1.8 Strained Silicon......Page 53
1.9 Basic Semiconductor Equations......Page 55
1.10 Compact MOSFET Models......Page 58
1.11 The p–n Junction Diode......Page 60
1.12 Tunneling Through Potential Barrier......Page 66
References......Page 70
Problems......Page 73
2.1 Physical Structure and Energy Band Diagram......Page 76
2.2 Modes of Operation of MOS Capacitors......Page 77
2.3 Electric Field and Potential Distributions......Page 88
2.4 Potential Balance......Page 92
2.5 Inversion Layer Thickness......Page 98
2.6 Threshold Voltage......Page 100
2.7 Small Signal Capacitance......Page 107
2.8 Three Terminal Ideal MOS Structures......Page 113
References......Page 130
Problems......Page 132
3.1 Introduction......Page 134
3.2 Flat-Band Voltage......Page 135
3.3 Inhomogeneous Substrate......Page 141
3.4 Polysilicon Depletion Effect......Page 153
3.5 Non-classical MOS Structures......Page 162
3.6 MOS Capacitor With Stacked Gate......Page 171
References......Page 174
Problems......Page 176
4.1 Introduction......Page 180
4.2 Layout and Cross-Section of Physical Structure......Page 183
4.3 Static Drain Current Model......Page 184
4.4 Threshold Voltage (VT ) Based Model......Page 198
4.5 Memelink–Wallinga Graphical Model......Page 207
4.6 Channel Length Modulation......Page 211
4.7 Channel Potential and Field Distribution Along Channel......Page 214
4.8 Carrier Transit Time......Page 217
4.9 EKV Drain Current Model......Page 218
4.10 ACM and BSIM5 Models......Page 223
4.11 PSP Model......Page 225
4.12 HiSIM (Hiroshima University STARC IGFET Model) Model......Page 227
4.13 Benchmark Tests for Compact DC Models......Page 229
References......Page 230
Problems......Page 232
5.1 Introduction......Page 236
5.2 Classical Scaling Laws......Page 237
5.3 Lateral Field Gradient......Page 242
5.4 Narrow and Inverse Width Effects......Page 258
5.5 Reverse Short Channel Effect......Page 264
5.6 Carrier Mobility Reduction......Page 269
5.7 Velocity Overshoot......Page 281
5.8 Channel Length Modulation: A Pseudo-2-D Analysis......Page 283
5.9 Series Resistance Effect on Drain Current......Page 288
5.10 Polydepletion Effect on Drain Current......Page 292
5.11 Impact Ionization in High Field Region......Page 294
5.13 Empirical Alpha Power MOSFET Model......Page 298
References......Page 302
Problems......Page 306
6.1 Introduction......Page 309
6.2 Quasistatic Approximation......Page 311
6.3 Terminal Charge Evaluation......Page 313
6.4 Quasistatic Intrinsic Small Signal Model......Page 321
6.5 Extrinsic Capacitances......Page 332
6.6 Non-quasistatic (NQS) Models......Page 337
6.7 Noise Models......Page 344
References......Page 355
Problems......Page 358
7.1 Introduction......Page 359
7.2 Carrier Energy Quantization in MOS Capacitor......Page 360
7.3 2-D Density of States......Page 363
7.4 Electron Concentration Distribution......Page 366
7.5 Approximate Methods......Page 371
7.6 Quantization Correction in Compact MOSFET Models......Page 372
7.7 Quantum Tunneling......Page 378
7.8 Gate Current Density......Page 379
7.9 Compact Gate Current Models......Page 385
7.10 Gate Induced Drain Leakage (GIDL)......Page 393
References......Page 399
Problems......Page 401
8.1 Introduction......Page 402
8.2 Non-classical MOSFET Structures......Page 405
8.3 Double Gate MOSFET Models......Page 409
References......Page 431
Appendix A: Expression for Electric Field and Potential Variation in the Semiconductor Space Charge under the Gate......Page 433
Appendix B: Features of Select Compact MOSFET Models......Page 436
Appendix C: PSP Two-point Collocation Method......Page 438
Index......Page 443