The homogeneous gas-phase decomposition kinetics of silane has been investigated using the single-pulse shock tube comparative rate technique (T = 1035-1184ยฐK, P ~d = 4000 Torr). The initial reaction of the decomposition SiH4 ! + SiHz + H2 is a unimolecular process in its pressure fall-off regime w
Comments on the spinodal decomposition mechanism and the kinetics of phase separation
โ Scribed by Theo F. Nonnenmacher
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 423 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0306-4549
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๐ SIMILAR VOLUMES
The homogeneous gas-phase thermal decomposition kinetics of germane have been measured in a single-pulse shock tube between 950 and 1060 K at pressures around 4000 torr. The initial decomposition is GeH4 -GeH2 + H2 in its pressure-dependent regime, with log k ~~~~( 4 m ) = 13.83 f 0.78 -50,750 f 357
The decomposition kinetics of ethylsilane under shock tube conditions (P, ca. 3100 torr, T = 1080-1245 K), both in the absence and presence of silylene trapping agents (butadiene and acetylene) are reported. Arrhenius parameters under maximum butadiene inhibition are: log K(C,H,SiH,) = 15.14-64,769
A n~mencai so~urmn of a recentI) dented d:sslpatlbe waw equation gavernmg the kmetlcs of spmodal decomposltmn of a Lennard-Jones Ruld 1s presenred In addltron. the r.zsults are compared wrth those of Cahn's and Abraham's generaked dtffusion theories for the case of rhe early stages of the coarsemng