Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment

Comparison between the Theoretical Predi

Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS2 and n-Type Diamond

✍ H. Katayama-Yoshida; H. Katayama-Yoshida; T. Nishimatsu; T. Yamamoto; T. Yamamot 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 373 KB

We propose a new valence control method, the ªcodoping method (using both n-and p-type dopants at the same time)º, for the fabrication of low-resistivity p-type GaN, AlN, ZnSe, CuInS 2 , and n-type diamond based upon ab initio electronic structure calculations. Based upon the calculation, we propose