Comparison between the Theoretical Prediction of Codoping and the Recent Experimental Evidences in p-Type GaN, AlN, ZnSe, CuInS2 and n-Type Diamond
✍ Scribed by H. Katayama-Yoshida; H. Katayama-Yoshida; T. Nishimatsu; T. Yamamoto; T. Yamamoto; N. Orita
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 373 KB
- Volume
- 210
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We propose a new valence control method, the ªcodoping method (using both n-and p-type dopants at the same time)º, for the fabrication of low-resistivity p-type GaN, AlN, ZnSe, CuInS 2 , and n-type diamond based upon ab initio electronic structure calculations. Based upon the calculation, we proposed the following codoping method to fabricate low-resistivity semiconductors: 1. GaN: Si Ga 2Mg Ga (or Be Ga ), H 2Mg Ga (or Be Ga ), and O N 2Mg Ga (or Be Ga ), 2. AlN: O N 2C N , 3. ZnSe: In Zn 2N Se , Cl Se 2N Se , Li Zn Cl Se (or I Se ), and Te Se 2N Se , 4. CuInS 2 : V Cu In Cu 2P, and 5. diamond: B 2N, and H 2P. We compare our prediction with the recent successful codoping experiments to fabricate the low-resistivity p-and n-type wide band-gap semiconductors.