CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications

✍ Scribed by Nadine Collaert

• Publisher: Pan Stanford
• Year: 2013
• Tongue: English
• Leaves: 444
• Category: Library

✦ Synopsis

This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.

✦ Table of Contents

Content: General Introduction Part 1: Integration of Multigate Devices (FinFET) Introduction to Multigate Devices and Integration Challenges Patterning Requirements for Multigate Devices Gate Stack Design Source/Drain Design: Reduction of Parasitic Resistance Part 2: Circuit-Related Aspects Variability and Its Implications for FinFET SRAM High T Performance of FinFET ESD and Multigate Devices Part 3: Beyond FinFET The Junctionless Nanowire Transistor Transport in Nanostructures Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire Thermionic Theory as a Tool for the Study of Transport in Doped and Undoped Si n-FINFETs Scaled Up to the Full Body Inversion Limit