CMOS gate array breaks 2μm channel length barrier

Achieving very high drain current of 1.2

Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET

✍ T.D. Lin; P. Chang; Y.D. Wu; H.C. Chiu; J. Kwo; M. Hong 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 530 KB

Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-mm-gate-length In 0.75 Ga 0.25 As MOSFETs