## Abstract A coplanar waveguide (CPW) was implemented in 0.13 μm CMOS technology and then postprocessed by CMOS compatible inductively‐coupled plasma etching, which removed the silicon underneath the coplanar strips. Transmission line parameters such as characteristic impedance Z~O~, attenuation c
CMOS compatible micromachining by dry silicon-etching techniques
✍ Scribed by S. Adams; U. Hilleringmann; K. Goser
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 334 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0167-9317
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