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Closely stacked InAs/GaAs quantum dots grown at low growth rate

✍ Scribed by Heidemeyer, H.; Kiravittaya, S.; Müller, C.; Jin-Phillipp, N. Y.; Schmidt, O. G.


Book ID
119993930
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
570 KB
Volume
80
Category
Article
ISSN
0003-6951

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The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 1C) and normal ($450 1C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium b