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Classification of impurity voltaic effects in semiconductors and impurity voltaics

✍ Scribed by M. S. Saidov


Book ID
111493727
Publisher
Allerton Press, Inc.
Year
2008
Tongue
English
Weight
146 KB
Volume
44
Category
Article
ISSN
0003-701X

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The standard theory of dopant diffusion in semiconductors based on the reaction᎐diffusion equations is generalized to include 'many body effects' due to the presence of a very high concentration of immobile dopants. This new formulation makes it possible to calculate the concentration profiles of do