ChemInform Abstract: Oxynitridation of Silicon and Postnitridation of Thermal Silicon Oxide in N2O in a Vertical Furnace.

✍ Scribed by P. LANGE; H. BONESS; M. HENDRIKS

• Publisher: John Wiley and Sons
• Year: 2010
• Weight: 31 KB
• Volume: 29
• Category: Article
• ISSN: 0931-7597
• DOI: 10.1002/chin.199808242

✦ Synopsis

Oxynitridation of Silicon and Postnitridation of Thermal Silicon

Oxide in N 2 O in a Vertical Furnace.

-In the preparation of gate and tunnel oxides with nitrided interfaces-processing in N 2 O ambient improves the metal oxide semiconductor performance. An optimization of the title process in a vertical furnace with a batch of 125 wafers is presented using reoxidation experiments as in-line monitors for nitrogen incorporation. With regard to the uniformity of thickness (4.5 nm) and the nitrogen incorporation, best results are obtained by using low gas flow values. Nitrogen peak concentrations for the postnitridation process at 900 • C and the direct oxynitridation process at 950 • C of 2.0 and 4.5 at.%, resp., are measured, i.e. the nitrogen levels are four times higher than those achieved with conventional furnaces. -(LANGE, P.;