๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

ChemInform Abstract: Metal-Assisted Chemical Etching of Silicon

โœ Scribed by Zhipeng Huang; Nadine Geyer; Peter Werner; Johannes de Boor; Ulrich Goesele

Publisher
John Wiley and Sons
Year
2011
Weight
18 KB
Volume
42
Category
Article
ISSN
0931-7597

No coin nor oath required. For personal study only.

โœฆ Synopsis

Abstract

Review: 121 refs.

๐Ÿ“œ SIMILAR VOLUMES

ChemInform Abstract: Wet Chemical Digita
ChemInform Abstract: Wet Chemical Digital Etching of GaAs at Room Temperature.
โœ G. C. DESALVO; C. A. BOZADA; J. L. EBEL; D. C. LOOK; J. P. BARRETTE; C. L. A. CE ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 29 KB ๐Ÿ‘ 1 views

Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of โ‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without

Modeling of flame assisted chemical vapo
Modeling of flame assisted chemical vapor deposition of silicon films
โœ M. Masi; C. Cavallotti; E. Raffa ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 327 KB

## Abstract The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline fi