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ChemInform Abstract: Low Pressure Chemical Vapor Deposition of Si1-xGex Films Using Si2H6 and GeH4 Source Gases.

✍ Scribed by J.-W. KIM; M.-K. RYU; K.-B. KIM; S.-J. KIM

Book ID
112031653
Publisher
John Wiley and Sons
Year
2010
Weight
32 KB
Volume
27
Category
Article
ISSN
0931-7597

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Growth of a Ge/Si/Ge (100) heterostructu
Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gasesβ€”photoemission and low energy electron diffraction studies
✍ F. Ringeisen; D. Steinmetz; S. Van; D. Bolmont; J.J. Koulmann πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 338 KB

We present photoemission and low energy electron diffraction (LEED) results obtained on a Ge/Si/Gc(100) heterostructure grown by very low pressure chemical vapour deposition of disilane (Si2H6) or germane (GeH4) on a Ge(100) 2 Γ— 1 substrate. Both gases were catalytically dissociated at a hot tungste