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ChemInform Abstract: DFT Modeling of Chemical Vapor Deposition of GaN from Organogallium Precursors. Part 2. Structures of the Oligomers and Thermodynamics of the Association Processes.

โœ Scribed by Alexey Y. Timoshkin; Holger F. Bettinger; Henry F. Schaefer III


Publisher
John Wiley and Sons
Year
2001
Weight
25 KB
Volume
32
Category
Article
ISSN
0931-7597

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ChemInform Abstract: Chemical Vapor Depo
โœ J. CHEON; J. E. GOZUM; G. S. GIROLAMI ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 29 KB

Chemical Vapor Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-tBu)4 and Ti(S-tBu)4. -The formation of thin MoS2 and TiS2 films by MOCVD from the title precursors is studied and the decomposition mechanism is described. Amorphous films with low levels of oxygen and carbon co