𝔖 Bobbio Scriptorium
✦   LIBER   ✦

ChemInform Abstract: Atomic Force Microscopy on (001) Surfaces of GaAs MOVPE Layers.

✍ Scribed by I. PIETZONKA; D. HIRSCH; V. GOTTSCHALCH; R. SCHWABE; R. FRANZHELD; K. BENTE; F. BIGL

Book ID
112038807
Publisher
John Wiley and Sons
Year
2010
Weight
26 KB
Volume
27
Category
Article
ISSN
0931-7597

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Atomic force microscopy on (001) surface
Atomic force microscopy on (001) surfaces of GaAs MOVPE layers
✍ Dr. Ines Pietzonka; Dr. Dietmar Hirsch; Dr. Volker Gottschalch; Dr. Reinhard Sch πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 849 KB

The formation of multi-atomic steps (step-flow growth with step-bunching) on the surface of 111-V semiconductor compounds during metal-organic vapor-phase epitaxial (MOVPE) growth is a phenomenon of considerable significance. As low-dimensional material arrangements are widely used in novel opto-and

Study of the influence of native oxide l
Study of the influence of native oxide layers on atomic force microscopy imaging of semiconductor surfaces
✍ H. Bluhm; U. D. Schwarz; F. Herrmann; P. Paufler πŸ“‚ Article πŸ“… 1994 πŸ› Springer 🌐 English βš– 757 KB

We have investigated the influence of the native oxide layer on semiconductor surfaces on the imaging properties of the atomic force microscope operated under ambient conditions by using epitaxial Inl\_xGaxAs layers grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on (001) oriented InP subs