Atomic layer epitaxial growth mechanism of a gallium layer on the (100) As surface of GaAs crystals in MOVPE

✍ Scribed by Tsuda, Minoru; Oikawa, Setsuko; Morishita, Mutsuo; Mashita, Masao

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 249 KB
• Volume: 99
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(90)90580-e