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Growth and physical properties of amorphous and single crystal ZnGeAs2 layers deposited on (100)GaAs by sputter deposition in excess Zn and As4

✍ Scribed by S.I. Shah; J.E. Greene


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
737 KB
Volume
68
Category
Article
ISSN
0022-0248

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