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Chemical and LP-etching of gallium antimonide substrates

โœ Scribed by Dr. L. D. Pramatarova; Dr. M. B. Baeva; I. M. Yordanova

Book ID
102128682
Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
380 KB
Volume
20
Category
Article
ISSN
0232-1300

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Growth of gallium antimonide epitaxial l
Growth of gallium antimonide epitaxial layers on indium arsenide substrates
โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e