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Charge transfer and electric strength of thin silicon oxynitride films

✍ Scribed by V. I. Kubrin; V. F. Korzo; E. G. Dorofeeva; M. V. Kacharava


Book ID
112428618
Publisher
Springer
Year
1983
Tongue
English
Weight
398 KB
Volume
26
Category
Article
ISSN
1573-9228

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## Abstract Silicon oxynitride (SiO~x~ N~y~) thin films were deposited on silicon substrates by ion‐assisted deposition. Variable angle spectroscopic ellipsometry (VASE) was used to optically characterize the deposited film properties, such as layer thickness and composition, film surface and inter