Charge retention of floating-gate transistors under applied bias conditions

✍ Scribed by Wang, S.T.

• Book ID: 114593326
• Publisher: IEEE
• Year: 1980
• Tongue: English
• Weight: 340 KB
• Volume: 27
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1980.19856