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Charge deep-level transient spectroscopy of Al/intrinsic diamond/p + -Si Schottky diodes

✍ Scribed by Thurzo, I; Zahn, D R T; Dua, A K


Book ID
120632473
Publisher
Institute of Physics
Year
2001
Tongue
English
Weight
225 KB
Volume
16
Category
Article
ISSN
0268-1242

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High resolution Laplace deep level trans
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## Abstract High resolution Laplace deep level transient spectroscopy (LDLTS) has been used to characterise deep electronic states in the band gap of polycrystalline p‐type diamond. The thin diamond films were grown by the hot‐filament chemical vapour deposition (HFCVD) technique on p‐type and n‐ty