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Charge-carrier densities and mobilities in bismuth doped with tin

✍ Scribed by J.M. Noothoven Van Goor

Publisher
Elsevier Science
Year
1966
Weight
149 KB
Volume
21
Category
Article
ISSN
0031-9163

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## Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^βˆ’3^. Hole‐only diodes were used for densities below 10^16^ cm^βˆ’3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^βˆ’3^. To fill the gap, i