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Charge buildup effects in asymmetric p-type resonant tunneling diodes

✍ Scribed by Y. Galvão Gobato; M.J.S.P. Brasil; I. Camps; H.B. de Carvalho; L.F. dos Santos; G.E. Marques; M. Henini; L. Eaves; G. Hill


Book ID
104050970
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
93 KB
Volume
36
Category
Article
ISSN
0026-2692

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