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Self-consistent modelling of charge storage effects in resonant tunnel diodes

โœ Scribed by R. Redhammer; D.W.E. Allsopp

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
272 KB
Volume
19
Category
Article
ISSN
0167-9317

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Hole localization effect on determination of charge accumulation in double barrier resonant tunneling structures
โœ T.H. Wang; J.M. Zhou; Y. Huang; G.Z. Yang ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 130 KB

We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q