Characterization of the low temperature activated N+/P junction formed by implant into silicide method

✍ Scribed by Kow-Ming Chang; Jian-Hong Lin; Chih-Hsiang Yang

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 424 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.137