✦ LIBER ✦

Characterization of the interface region in VPE GaAs

✍ Scribed by A. Shibatomi; N. Yokoyama; H. Ishikawa; K. Dazai; O. Ryuzan

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 289 KB
Volume: 31
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(75)90136-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Atomic-scale characterization of interfa

Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices

✍ Yu.A. Pusep; S.W. da Silva; J.C. Galzerani; D.I. Lubyshev; P. Basmaji; A.G. Mile 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 314 KB

Experimental and theoretical study of lo

Experimental and theoretical study of low pressure GaAs VPE in the chloride system

✍ J.L. Gentner; C. Bernard; R. Cadoret 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 892 KB

A quantum chemical study of chlorine des

A quantum chemical study of chlorine desorption by hydrogen in the VPE of GaAs

✍ W. Seifert; S. Schwetlick; J. Reinhold; E. Butter 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 300 KB

Characterization of SiO2GaAs interface

Characterization of SiO2GaAs interface structures using spectroscopic ellipsometry

✍ Y. Watanabe; T. Saitoh; M. Miyazaki; K. Suzuki 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 341 KB

Characterization of the interface states

Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer

✍ J.R. Morante; A. Lousa; J.E. Carceller; J.L. Morenza 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 163 KB

Determination of the Thickness of Chemic

Determination of the Thickness of Chemically Removed Thin Layers on GaAs VPE Structures

✍ K. Somogyi; M. Németh-Sallay; Á. Nemcsics 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 379 KB 👁 1 views

Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface dunng the device preparation processes, though the possible thinning o