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Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

✍ Scribed by D. R. Myers; G. W. Arnold; I. J. Fritz; L. R. Dawson; R. M. Biefeld; C. R. Hills; B. L. Doyle

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Material characterization of an ion-impl

✍ D. R. Myers; E. D. Jones; I. J. Fritz; L. R. Dawson; T. E. Zipperian; R. M. Bief 📂 Article 📅 1989 🏛 Springer US 🌐 English ⚖ 756 KB

Characterization of (In,Ga)As/GaAs strai

✍ R. Zaus; M. Schuster; H. Göbel; J.-P. Reithmaier 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 315 KB

Uniaxial stress study of the quantum tra

✍ H. Qiang; Fred H. Pollak; C. Mailhiot; G.D. Pettit; J.M. Woodall 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 417 KB