Characterization of silicon compounds using the Auger parameter in X-ray Photoelectron Spectroscopy (XPS)
β Scribed by Shigemi Kohiki; Shinji Ozaki; Tomoko Hamada; Kazuo Taniguchi
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 474 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0169-4332
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Chemical shifts in coru binding energies have been determined for analogous gaseous compounds of carbon, silicon and germanium. These data, in conjunction with the atomic charge potential model and both CNDO/Z and electronegativity parameter charges, indicate that the silicon and germanium atoms in
Overlayers of SiO 2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxi