✦ LIBER ✦

Characterization of Rapidly Thermally Annealed GaAs and InP Surfaces Using Schottky Barriers

✍ Scribed by Eftekhari, G.

Book ID: 105382412
Publisher: John Wiley and Sons
Year: 1990
Tongue: English
Weight: 298 KB
Volume: 122
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211220238

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural, electrical, and surface morp

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n-type InP

✍ Reddy, V. Rajagopal ;Reddy, D. Subba ;Naik, S. Sankar ;Choi, C.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 884 KB

## Abstract We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measure

Determination of the laterally homogeneo

Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

✍ S. Asubay; Ö. Güllü; A. Türüt 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 248 KB

Photoemission study of Au Schottky-barri

Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

✍ Chye, P. W.; Lindau, I.; Pianetta, P.; Garner, C. M.; Su, C. Y.; Spicer, W. E. 📂 Article 📅 1978 🏛 The American Physical Society 🌐 English ⚖ 970 KB

The use of Schottky barrier diodes for t

The use of Schottky barrier diodes for the detection of surface contamination and damage in the fabrication of GaAs MESFETS

✍ D.A. Allan; P.J. Smith; J.A. Bowie 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 421 KB

Rapid thermal annealing of InP using GaA

Rapid thermal annealing of InP using GaAs and InP proximity caps: Jesús A del Alamo and Takashi Mizutani, J appl Phys, 62, 1987, 3456–3458

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Characterization of thermally oxidized T

Characterization of thermally oxidized Ta/GaAs Schottky barrier structures prepared by low energy RF sputtering with X-ray photoemission, TEM and optical transmittance measurements

✍ P. Gladkov; K. Varblianska; Ts. Marinova; V. Krastev; J. Stoemenos 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 563 KB