𝔖 Bobbio Scriptorium

✦ LIBER ✦

Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

✍ Scribed by Shaw-Hung Gu; Tahui Wang; Wen-Pin Lu; Wenchi Ting; Ku, Y.-H.J.; Chih-Yuan Lu

Book ID: 114618053
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 499 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.860632

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE ISSCC. 2005 IEEE International Dig

[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump

✍ Sundaram, R.; Javanifard, J.; Walimbe, P.; Pathak, B.M.; Melcher, R.L.; Peining 📂 Article 📅 2005 🏛 IEEE ⚖ 868 KB