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[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump

✍ Scribed by Sundaram, R.; Javanifard, J.; Walimbe, P.; Pathak, B.M.; Melcher, R.L.; Peining Wang, ; Tacata, J.I.

Book ID: 121184135
Publisher: IEEE
Year: 2005
Weight: 868 KB
Category: Article
ISBN-13: 9780780389045
DOI: 10.1109/ISSCC.2005.1493863

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