Three new sulphur-passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction With other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation filmlsubstr
Characterization of porous titania glass: Raman, x-ray diffraction and x-ray photoelectron spectroscopic studies
✍ Scribed by Yee Hong Chee; R. P. Cooney; R. F. Howe; P. A. W. van der Heide
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 518 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0377-0486
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