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Characterization of p-AgGaSe2/n-CdS thin film heterojunction

โœ Scribed by Y.Satyanarayana Murthy; O.Mahammad Hussain; B.Srinivasulu Naidu; P.Jayarama Reddy


Book ID
119124686
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
439 KB
Volume
10
Category
Article
ISSN
0167-577X

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โœ Y. Satyanarayana Murty; B. Srinivasulu Naidu; P. Jayarama Reddy ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 405 KB

Polycrystalline thin film p-AgGaSe2/n-Zno.sCd0.sS heterojunctions were fabricated and the currentvoltage, capacitance-voltage and spectral response characteristics were studied. The typical cell parameters obtained were Voc = 550 mV, J~c = 12 mA cm -2, FF = 0.57 and r/= 4.4% with an intensity of 85