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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

✍ Scribed by Kil, Yeon-Ho; Yang, Hyeon Deok; Yang, Jong-Han; Park, Ah Hyun; Kang, Sukill; Jeong, Tae Soo; Kim, Taek Sung; Shim, Kyu-Hwan

Book ID
120524981
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
669 KB
Volume
16
Category
Article
ISSN
1369-8001

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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 Β°C without thermal annealing and allowing the integration w