𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characterization of Mg0.20Zn0.80O metal–semiconductor–metal photodetectors

✍ Scribed by Dayong Jiang; Xiyan Zhang; Quansheng Liu; Zhaohui Bai; Liping Lu; Xiaochun Wang; Xiaoyun Mi; Nengli Wang; Dezhen Shen

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
456 KB
Volume
175
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical behaviour of 0.80Pb[(Mg,Zn)1/
Electrical behaviour of 0.80Pb[(Mg,Zn)1/3Ta2/3]O3–0.20PbTiO3 relaxor
✍ S. Prasad; K. Prasad; S.N. Choudhary; T.P. Sinha 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Polycrystalline 0.80Pb[(Mg 2/3 Zn 1/3 ) 1/3 Ta 2/3 ]O 3 -0.20PbTiO 3 (PMZT-PT) having a tetragonal perovskite type structure was prepared by the high temperature solid-state reaction method. Dielectric studies showed the relaxor behaviour with diffuse phase transition. High value of m 48000 was real

AlGaN-based high-performance metal–semic
AlGaN-based high-performance metal–semiconductor–metal photodetectors
✍ Mutlu Gökkavas; Serkan Butun; Turgut Tut; Necmi Biyikli; Ekmel Ozbay 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 909 KB

Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal-semiconductor-metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 Â 10 À10 A/cm 2 at a 50 V bia