𝔖 Bobbio Scriptorium

✦ LIBER ✦

Characterization of large area devices by an improved constant capacitance voltage transient technique

✍ Scribed by Jeng-Jye Shiau; Alen L. Fahrenbruch; Richard H. Bube

Publisher: Elsevier Science
Year: 1988
Weight: 334 KB
Volume: 24
Category: Article
ISSN: 0379-6787
DOI: 10.1016/0379-6787(88)90088-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterisation of large area devices b

Characterisation of large area devices by an improved constant capacitance voltage transient technique: JENG-JYE SHIAU, A L FAHRENBRUCH, R H BUBE (Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA) Sol. Cells (Switzerland), vol. 24, no. 3–4, pp 363–369 (July-Aug 1988). (Eighth Photovoltaic Research and Development Project Review Meeting, Denver, CO, USA, 15–18 Nov. 1987)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 72 KB

Process and device characterization of h

Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method

✍ G. Ashkinazi; Tz. Hadas; B. Meyler; M. Nathan; L. Zolotarevski; O. Zolotarevski 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 693 KB