## Abstract Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cl
✦ LIBER ✦
Characterization of InGaN/GaN heterostructures by means of RBS/channeling
✍ Scribed by L. Nowicki; R. Ratajczak; A. Stonert; A. Turos; J.M. Baranowski; R. Banasik; K. Pakuła
- Book ID
- 114171868
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 147 KB
- Volume
- 161-163
- Category
- Article
- ISSN
- 0168-583X
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Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)