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Characterization of in-plane structures of vapor deposited thin-films of distyryl-oligothiophenes by grazing incidence x-ray diffractometry

✍ Scribed by Noriyuki Yoshimoto; Keijyu Aosawa; Toshinori Taniswa; Kazuhiko Omote; J. Ackermann; C. Videlot-Ackermann; H. Brisset; F. Fages


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
518 KB
Volume
42
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

The in‐plane structures of vapor deposited ultrathin films of distyryl‐oligothiophenes (DS‐2T) on SiO~2~ substrate were characterized by grazing incidence x‐ray diffractometry (GIXD). Two polymorphs, low‐temperature and high‐temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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