Characterization of in-plane structures of vapor deposited thin-films of distyryl-oligothiophenes by grazing incidence x-ray diffractometry

✍ Scribed by Noriyuki Yoshimoto; Keijyu Aosawa; Toshinori Taniswa; Kazuhiko Omote; J. Ackermann; C. Videlot-Ackermann; H. Brisset; F. Fages

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 518 KB
• Volume: 42
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200711010

✦ Synopsis

Abstract

The in‐plane structures of vapor deposited ultrathin films of distyryl‐oligothiophenes (DS‐2T) on SiO~2~ substrate were characterized by grazing incidence x‐ray diffractometry (GIXD). Two polymorphs, low‐temperature and high‐temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)