## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N Γ· ions at a dose of 7.5Γ1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed
β¦ LIBER β¦
Characterization of implanted silicon wafers by the non-linear photoreflectance technique
β Scribed by B.C. Forget; D. Fournier
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 315 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0921-5107
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Characterization of the inactive clusters formed by high dose implantation silicon are one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the complexes that are formed at dopant concentrations ab