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Characterization of IMPATT diodes at millimeter-wave frequencies

✍ Scribed by Kuno, H.J.; Fong, T.T.; English, D.L.


Book ID
114590305
Publisher
IEEE
Year
1972
Tongue
English
Weight
641 KB
Volume
19
Category
Article
ISSN
0018-9383

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SiC IMPATT de¨ices ha¨e an efficiency and power ad¨antage o¨er Si and GaAs IMPATT de¨ices at millimeter-wa¨e frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type ( large-signal model. The simulation