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Characterization of II–VI: 3d crystals with the help of ultrasonic technique

✍ Scribed by V.V. Gudkov; A.T. Lonchakov; I.V. Zhevstovskikh; V.I. Sokolov; Yu.V. Korostelin; A.I. Landman; V.T. Surikov

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
179 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis

The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn-Teller system. Attenuation coefficient per the impurity ion b obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II-VI: 3d semiconductors: ZnSe:Ni 2+ , ZnTe:Ni 2+ , ZnSe:V 2+ , ZnSe:Cr 2+ , and ZnSe:Fe 2+ at 54 MHz. Anomalously large value of b ¼ 23 Â 10 À18 dB cm 2 was found for Cr 2+ in ZnSe.

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