✦ LIBER ✦

Characterization of gallium–nitrogen co-doped zinc oxide thin films prepared by RF diode sputtering

✍ Scribed by Krasimira Shtereva; Sona Flickyngerova; Vladimir Tvarozek; Ivan Novotny; Jaroslav Kovac; Andrej Vincze

Book ID: 113940841
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 498 KB
Volume: 86
Category: Article
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2011.07.006

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical Properties of Gallium-Doped Z

Electrical Properties of Gallium-Doped Zinc Oxide Films Prepared by RF Sputtering

✍ Byung Ho Choi; Ho Bin Im; Jin Soo Song 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 401 KB

The properties of aluminum-doped zinc ox

The properties of aluminum-doped zinc oxide thin films prepared by rf-magnetron sputtering from nanopowder targets

✍ Z. Ben Ayadi; L. El Mir; K. Djessas; S. Alaya 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 458 KB

Characterization of aluminum-doped zinc

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

✍ Hung-Wei Wu, Ru-Yuan Yang, Chin-Min Hsiung, Chien-Hsun Chu 📂 Article 📅 2012 🏛 Springer US 🌐 English ⚖ 618 KB

Characteristics of Al doped zinc oxide (

Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering

✍ Satoshi Kobayakawa; Yoshikazu Tanaka; Ari Ide-Ektessabi 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 259 KB

Preparation and characterization of tran

Preparation and characterization of transparent conductive zinc doped tin oxide thin films prepared by radio-frequency magnetron sputtering

✍ Jiang Zhao; Jiamiao Ni; Xiujian Zhao; Yuli Xiong 📂 Article 📅 2011 🏛 Wuhan University of Technology 🌐 English ⚖ 340 KB

Fabrication of low-resistive p-type Al–N

Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering

✍ Hsin-Chun Lu; Jo-Ling Lu; Chi-You Lai; Gwo-Mei Wu 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 244 KB

p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and st