✦ LIBER ✦

Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide

✍ Scribed by F. A. Mohammad; Y. Cao; L. M. Porter

Book ID: 107453596
Publisher: Springer US
Year: 2007
Tongue: English
Weight: 345 KB
Volume: 36
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-006-0083-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of Si interlayer conditions on p

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

✍ T. Jang; J. W. Erickson; L. M. Porter 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 229 KB

Electrical characterization of TiC ohmic

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

✍ Lee, S.-K.; Zetterling, C.-M.; Danielsson, E.; Ostling, M.; Palmquist, J.-P.; Ho 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 289 KB

Fabrication and characterization of nick

Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

✍ Kuchuk, A; Kladko, V; Guziewicz, M; Piotrowska, A; Minikayev, R; Stonert, A; Rat 📂 Article 📅 2008 🏛 Institute of Physics 🌐 English ⚖ 858 KB