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Characterization of electron irradiation induced defects in δ-doped GaAs superlattice structures

✍ Scribed by F Delattre; C Priester; D Stievenard; S.L Feng; J.C Bourgoin; E Barbier


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
225 KB
Volume
76
Category
Article
ISSN
0038-1098

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Using atomic force microscopy (AFM), low-temperature photoluminescence (both CW and timeresolved) as well as Raman spectroscopy, we have performed a comparative investigation of asgrown and a-particle irradiated GaAs doping superlattices. From AFM no evidence of structural damages was found. On the