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Characterization of defects in self-ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy

✍ Scribed by Fujinami, M.; Tsuge, A.; Tanaka, K.

Book ID
120675062
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
341 KB
Volume
79
Category
Article
ISSN
0021-8979

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