## Abstract A high resolution X‐ray diffraction method has been effectively used for the structural characterization of InP porous layers. It was revealed that strong diffuse scattering from pores around reciprocal lattice points does depend on the azimuth positions of samples. To extract structura
✦ LIBER ✦
Characterization of CdTe/Hg1−xCdxTe heterostructures by high-resolution x-ray diffraction
✍ Scribed by N. Mainzer; D. Shilo; E. Zolotoyabko; G. Bahir; A. Sher
- Book ID
- 107457562
- Publisher
- Springer US
- Year
- 1997
- Tongue
- English
- Weight
- 406 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Characterization of InP porous layer by
✍
Punegov, V. I. ;Lomov, A. A. ;Shcherbachev, K. D.
📂
Article
📅
2007
🏛
John Wiley and Sons
🌐
English
⚖ 502 KB
Characterization of Selectively Doped In
✍
E. M. Pashaev; S. N. Yakunin; A. A. Zaitsev; V. G. Mokerov; Yu. V. Fedorov; R. M
📂
Article
📅
2002
🏛
Springer
🌐
English
⚖ 72 KB
High-resolution X-ray diffraction study
High-resolution X-ray diffraction study of ZnSeGaAs heterostructures grown by molecular beam epitaxy
✍
I.K. Sou; S.M. Mou; Y.W. Chan; G.C. Xu; G.K.L. Wong
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 525 KB
High resolution X-ray diffraction analys
✍
Matyi, R. J. ;Jamil, M. ;Shahedipour-Sandvik, F.
📂
Article
📅
2007
🏛
John Wiley and Sons
🌐
English
⚖ 478 KB
## Abstract High resolution triple‐axis X‐ray diffraction has been used to characterize the effects of nitrogen ion implantation into thin (15 nm and 55 nm) AlN buffer layers on the resultant structural quality of nominally 2 μm epitaxial GaN layers grown on silicon substrates. The GaN symmetric (0
X-ray asymptotic Bragg diffraction: stud
✍
V. Chaplanov; A. Nefedov; I. Shipov; S. Yakimov
📂
Article
📅
1994
🏛
Elsevier Science
🌐
English
⚖ 136 KB
InGaAs/GaAs strained single quantum well
✍
C. Ferrari; M.R. Bruni; F. Martelli; M.G. Simeone
📂
Article
📅
1993
🏛
Elsevier Science
🌐
English
⚖ 600 KB