We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have be
โฆ LIBER โฆ
Characterization of carrier concentration in CIGS solar cells by scanning capacitance microscopy
โ Scribed by Matsumura, Koji; Fujita, Takaya; Itoh, Hiroshi; Fujita, Daisuke
- Book ID
- 126998135
- Publisher
- Institute of Physics
- Year
- 2014
- Tongue
- English
- Weight
- 805 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0957-0233
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Carrier concentration profiles in 6H-SiC
โ
F. Giannazzo; P. Musumeci; L. Calcagno; A. Makhtari; V. Raineri
๐
Article
๐
2001
๐
Elsevier Science
๐
English
โ 161 KB
[Springer Proceedings in Physics] Micros
โ
Cullis, A. G.; Hutchison, J. L.
๐
Article
๐
2005
๐
Springer Berlin Heidelberg
โ 267 KB
[NanoScience and Technology] Scanning Pr
โ
Bhushan, Bharat
๐
Article
๐
2012
๐
Springer Berlin Heidelberg
โ 584 KB
Investigation of Dye Regeneration Kineti
โ
Zhang, Bingyan; Xu, Xiaobao; Zhang, Xiaofan; Huang, Dekang; Li, Shaohui; Zhang,
๐
Article
๐
2014
๐
John Wiley and Sons
๐
English
โ 703 KB
Analytical procedure for experimental qu
โ
Fujita, Takaya; Matsumura, Koji; Itoh, Hiroshi; Fujita, Daisuke
๐
Article
๐
2014
๐
Institute of Physics
๐
English
โ 763 KB
Development and optimization of scanning
โ
Eyben, Pierre ;Seidel, Felix ;Hantschel, Thomas ;Schulze, Andreas ;Lorenz, Anne
๐
Article
๐
2010
๐
John Wiley and Sons
๐
English
โ 279 KB
## Abstract Within this work, we have explored the use of scanning spreading resistance microscopy (SSRM) on advanced solar cell structures. Three main topics, corresponding to three important needs, were targeted. First, we have analyzed the highly doped regions at the frontside of solar cells. Th