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Characterization of AlxGa1−xAs/GaAs Heterostructures by Electroreflectance Depth Profiling

✍ Scribed by Goldhahn, R. ;Röppischer, H. ;Gericke, M. ;Richter, C.-E.

Book ID
105381983
Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
377 KB
Volume
119
Category
Article
ISSN
0031-8965

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Liquid phase epitaxy of AlxGa1–xAs-GaAs
Liquid phase epitaxy of AlxGa1–xAs-GaAs heterostructures
✍ Zh. I. Alferov; V. M. Andreyev; S. G. Konnikov; V. R. Larionov; G. N. Shelovanov 📂 Article 📅 1975 🏛 John Wiley and Sons 🌐 English ⚖ 539 KB

## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs–GaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.